Doctoral Thesis - Modelling of strain effects in power MOSFETs (f/m/div)

Skip to main contentJob SearchMy ActivityProfileCareersFAQsBenefitsJoin Talent NetworkSign InEnglishSingle Position#WeAreInView All JobsHybridDoctoral Thesis - Modelling of strain effects in power MOSFETs (f/m/div)Villach (Austria)Apply NowSave JobFind out how well your profile matches this jobUpload your resumeJob descriptionBenefits and company informationJob IdHRC1718204Job FamilyResearch & DevelopmentType of EmploymentFull timeDuration of EmploymentTemporaryWorkplace TypeHybridJoin asPhD Student#WeAreIn to create tiny chips and big careers. Are you ready to take the first step in your career? Let's shape the future together! Whether you join as a student, intern, or trainee, you'll be part of something real - real projects, real impact, and real opportunities to grow. Are you in?Your RoleAs an industrial doctorate at Infineon, you will pursue a doctoral degree at a university and gain professional experience simultaneously - an ideal start for your career. Advance your research with us and profit from our vast network of doctoral candidates and the expertise of a university. Mentorship is handled by both professors and dedicated Infineon employees.Key responsibilities in your new roleObjective: Predict strain effects in low voltage and medium voltage power metal–oxide–semiconductor field‑effect transistors via technology computer‑aided design (TCAD) to steer performance gains from mobility enhancementSimulation: Build and run technology computer‑aided design (TCAD) setups for coupled mechanical stress and electrical behavior in devicesCalibration: Adjust mechanical stress models and parameters against process conditions and available experimental data to ensure realistic resultsProcess Steps: Cover material deposition, crystal growth and etching when calibrating and simulatingCoupling: Link process‑induced stress to electrical characteristics and carrier mobility modelsDefect Risk: Pinpoint critical stress locations to avoid crystal defects in future device designsFurther Information:Type of employment: Temporary / Full-time (flexible working hours from Monday to Friday between 6 a.m. and 7 p.m.)Duration: 3 yearsThe thesis will be written in cooperation with our academic partner at University of Twente.Your ProfileQualifications and skills to help you succeedEducation: Completed Master degree in Electrical Engineering or PhysicsLanguage Skills: English fluent, German as a plus Specialization: Focus in semiconductor physics, microelectronics, power devices, simulation or semiconductor technology preferredDevices: Understanding of power metal–oxide–semiconductor field‑effect transistors and their operating principlesSimulation: Familiarity with device and process simulation methods, including technology computer‑aided design (TCAD)Processing: Knowledge of semiconductor fabrication steps such as deposition, epitaxy and etchingPlease attach the following documents to your application: Your CVMotivation letterCopy of your master degree certificate if already availableOtherwise: copy of your latest study transcriptThis position is subject to the collective agreement for workers and employees in the electrical and electronics industry. The salary for this position is EUR 3.715,00 gross p.m. (full-time basis).Contact:    Sabrina Nindler#WeAreIn for driving decarbonization and digitalization.As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.Are you in?We are on a journey to create the best Infineon for everyone.This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are...